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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
Type:
Conference Proceedings
Info:
2016 IEEE Workshop on Microelectronics and Electron Devices (WMED)
Date:
2016-04-15
Author Information
| Name | Institution |
|---|---|
| H. U. Li | The Pennsylvania State University |
| Thomas N. Jackson | The Pennsylvania State University |
Films
Film/Plasma Properties
Characteristic: Mobility
Analysis: -
Substrates
| Polyimide |
Keywords
| Flexible Circuits |
Notes
| 820 |