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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
Type:
Conference Proceedings
Info:
2016 IEEE Workshop on Microelectronics and Electron Devices (WMED)
Date:
2016-04-15
Author Information
| Name | Institution |
|---|---|
| H. U. Li | The Pennsylvania State University |
| Thomas N. Jackson | The Pennsylvania State University |
Films
Film/Plasma Properties
Characteristic: Mobility
Analysis: -
Substrates
| Polyimide |
Keywords
| Flexible Circuits |
Notes
| 820 |