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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
Type:
Conference Proceedings
Info:
2016 IEEE Workshop on Microelectronics and Electron Devices (WMED)
Date:
2016-04-15
Author Information
| Name | Institution |
|---|---|
| H. U. Li | The Pennsylvania State University |
| Thomas N. Jackson | The Pennsylvania State University |
Films
Film/Plasma Properties
Characteristic: Mobility
Analysis: -
Substrates
| Polyimide |
Keywords
| Flexible Circuits |
Notes
| 820 |