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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates

Type:
Conference Proceedings
Info:
2016 IEEE Workshop on Microelectronics and Electron Devices (WMED)
Date:
2016-04-15
DOI:
http://dx.doi.org/10.1109/WMED.2016.7458277

Author Information

Name Institution
H. U. LiThe Pennsylvania State University
Thomas N. JacksonThe Pennsylvania State University

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
CO2, Carbon Dioxide
CAS#: 124-38-9
Where to buy precursor
Deposition Temperature = 200C

Plasma ZnO

Hardware used: Custom
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
N2O, Nitrous Oxide
CAS#: 10024-97-2
Where to buy precursor
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Mobility
Analysis: -
Diagnostic: -

Substrates

Polyimide

Notes

820