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Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants

Type: Journal

Info: Journal of The Electrochemical Society, 156 (9) G138-G143 (2009)

Date: 2009-06-05

DOI: http://dx.doi.org/10.1149/1.3169516

Author Information

Name

Institution

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Films

Deposition Temperature = 250C

546-68-9

7782-44-7

Deposition Temperature = 250C

546-68-9

10024-97-2

Deposition Temperature = 250C

546-68-9

75-24-1

7782-44-7

Deposition Temperature = 250C

546-68-9

75-24-1

10024-97-2

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Areal Density

XRF, X-Ray Fluorescence

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

HP 4194A

Leakage Current

I-V, Current-Voltage Measurements

HP 4140

Substrates

Ru

Keywords

Notes

754



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