ASM Genitech PEALD Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using ASM Genitech PEALD hardware returned 19 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
2Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
3Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
4Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
5Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
6Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
7Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
8Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
9Flexible Memristive Memory Array on Plastic Substrates
10Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
11A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
12Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
13Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
14Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
15Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method
16Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
17The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
18Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
19Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate