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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
Type:
Journal
Info:
Applied Physics Letters 89, 093115 (2006)
Date:
2006-07-03
Author Information
| Name | Institution |
|---|---|
| Sung-Soo Yim | Seoul National University |
| Moon-Sang Lee | Seoul National University |
| Ki-Su Kim | Seoul National University |
| Ki-Bum Kim | Seoul National University |
Films
Plasma Ru
Film/Plasma Properties
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Characteristic: Unknown
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| SiO2 |
Keywords
| Nucleation |
Notes
| 1005 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |