Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications

Type:
Journal
Info:
Applied Physics Letters 89, 093115 (2006)
Date:
2006-07-03
DOI:
http://dx.doi.org/10.1063/1.2338793

Author Information

Name Institution
Sung-Soo YimSeoul National University
Moon-Sang LeeSeoul National University
Ki-Su KimSeoul National University
Ki-Bum KimSeoul National University

Films

Plasma Ru

Hardware used: ASM Genitech PEALD
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM-3000F

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7400F

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Unknown
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Substrates

SiO2

Notes

1005