Publication Information

Title:
Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020902 (2019)
Date:
2018-12-13

Author Information

Name Institution
Donghyuk ShinYonsei University
Heungseop SongYonsei University
Ji-eun JeongYonsei University
Heungsoo ParkYonsei University
Dae-Hong KoYonsei University

Films

Plasma SiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Etch Rate
Analysis: Custom

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Silicon

Keywords

Wet Etch Rate

Notes

O2 flow continuous. GPC may have CVD component from gas phase reactions between DIPAS pulse and O2.
1275