Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS, CAS# 908831-34-5

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1DOCK/CHEMICALS🇩🇪Diisopropylaminosilane

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 9 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
2A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
3Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
4Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
5Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
6Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
7Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
8Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
9A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition