Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS, CAS# 908831-34-5

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1DOCK/CHEMICALS🇩🇪Diisopropylaminosilane

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 10 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
2Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
3A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
4Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
5Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
6Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
7Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
8A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
9Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
10Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices