Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS, CAS# 908831-34-5

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
2Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
3Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
4Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
5Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications