A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
Type:
Journal
Info:
Ceramics International 47 (2021) 34774-34782
Date:
2021-09-02
Author Information
Name | Institution |
---|---|
Ju-Hwan Han | Hanyang University |
Dong-Yeon Kim | Hanyang University |
Seung-Hwan Lee | Hanyang University |
Hae Lin Yang | Hanyang University |
Byung Ho Park | EMNI Co., Ltd. |
Jin-Seong Park | Hanyang University |
Films
Plasma SiO2
Plasma SnO2
Plasma SiSnOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Calcium Test
Substrates
Silicon |
PEN, Polyethylene Napthalate |
Notes
Used one of many available ISAC Research Inc. PEALD systems. |
1644 |