Name

Institution

Sungin Suh

Seoul National University

Seung Wook Ryu

Stanford University

Seongjae Cho

Gachon University

Jun-Rae Kim

Seoul National University

Seongkyung Kim

Seoul National University

Cheol Seong Hwang

Seoul National University

Hyeong Joon Kim

Seoul National University

Plasma SiN_x using ASM Genitech PEALD

Deposition Temperature = 325C

Bis(diethylamino)silane, BDEAS, SAM-24, (Et₂N)₂SiH₂

27804-64-4

Where to buy precursor

Ammonia, NH₃

7664-41-7

Plasma SiN_x using ASM Genitech PEALD

Deposition Temperature = 325C

Tetrakis(ethylamido)Silane, (EtHN)₄Si, TEAS

0-0-0

Ammonia, NH₃

7664-41-7

Plasma SiN_x using ASM Genitech PEALD

Deposition Temperature = 325C

Tris(IsoPropyl)AminoSilane, TIPAS

0-0-0

Ammonia, NH₃

7664-41-7

Plasma SiN_x using ASM Genitech PEALD

Deposition Temperature = 325C

Di(isopropylamino)Silane, (i-PrHN)₂SiH₂, DIPAS

908831-34-5

Ammonia, NH₃

7664-41-7

Plasma Sb₂Te₃ using ASM Genitech PEALD

Deposition Temperature Range N/A

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Gaertner L116D

Refractive Index

Ellipsometry

Gaertner L116D

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Perkin Elmer PHI600

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG Sigma Probe

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Bruker Optics Tensor 27

Electrical Properties

Unknown

HP 4140

Silicon

Investigated adding Ar plasma after Si precursor for activation. Also used multiple Si precursor-Ar plasma steps prior to NH₃ plasma step.

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