
Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A136 (2016)
Date:
2015-12-01
Author Information
Name | Institution |
---|---|
Sungin Suh | Seoul National University |
Seung Wook Ryu | Stanford University |
Seongjae Cho | Gachon University |
Jun-Rae Kim | Seoul National University |
Seongkyung Kim | Seoul National University |
Cheol Seong Hwang | Seoul National University |
Hyeong Joon Kim | Seoul National University |
Films
Plasma SiNx
Plasma SiNx
Plasma SiNx
Plasma SiNx
Plasma Sb2Te3
Hardware used: ASM Genitech PEALD
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Electrical Properties
Analysis: -
Substrates
Silicon |
Notes
Investigated adding Ar plasma after Si precursor for activation. Also used multiple Si precursor-Ar plasma steps prior to NH3 plasma step. |
445 |