Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A136 (2016)
Date:
2015-12-01

Author Information

Name Institution
Sungin SuhSeoul National University
Seung Wook RyuStanford University
Seongjae ChoGachon University
Jun-Rae KimSeoul National University
Seongkyung KimSeoul National University
Cheol Seong HwangSeoul National University
Hyeong Joon KimSeoul National University

Films


Plasma SiNx


Plasma SiNx


Plasma SiNx


Plasma Sb2Te3

Hardware used: ASM Genitech PEALD


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Electrical Properties
Analysis: -

Substrates

Silicon

Notes

Investigated adding Ar plasma after Si precursor for activation. Also used multiple Si precursor-Ar plasma steps prior to NH3 plasma step.
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