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Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A136 (2016)
Date:
2015-12-01
Author Information
| Name | Institution |
|---|---|
| Sungin Suh | Seoul National University |
| Seung Wook Ryu | Stanford University |
| Seongjae Cho | Gachon University |
| Jun-Rae Kim | Seoul National University |
| Seongkyung Kim | Seoul National University |
| Cheol Seong Hwang | Seoul National University |
| Hyeong Joon Kim | Seoul National University |
Films
Plasma SiNx
Plasma SiNx
Plasma SiNx
Plasma SiNx
Plasma Sb2Te3
Hardware used: ASM Genitech PEALD
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Electrical Properties
Analysis: -
Substrates
| Silicon |
Keywords
Notes
| Investigated adding Ar plasma after Si precursor for activation. Also used multiple Si precursor-Ar plasma steps prior to NH3 plasma step. |
| 445 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |