Publication Information

Title:
Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A136 (2016)
Date:
2015-12-01

Author Information

Name Institution
Sungin SuhSeoul National University
Seung Wook RyuStanford University
Seongjae ChoGachon University
Jun-Rae KimSeoul National University
Seongkyung KimSeoul National University
Cheol Seong HwangSeoul National University
Hyeong Joon KimSeoul National University

Films

Plasma SiNx


Plasma SiNx


Plasma SiNx


Plasma SiNx


Plasma Sb2Te3

Hardware used: ASM Genitech PEALD


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Electrical Properties
Analysis: -

Substrates

Silicon

Keywords

Notes

Investigated adding Ar plasma after Si precursor for activation. Also used multiple Si precursor-Ar plasma steps prior to NH3 plasma step.
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