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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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TIPAS, 3IPAS, ((CH3)2CHN)3SiH, Tris(IsoPropyl)AminoSilane, CAS# 0-0-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 5 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
2Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
3Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
4Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
5Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor