Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 14 (1) D10-D12 (2011)
Date:
2010-10-06
DOI:
http://dx.doi.org/10.1149/1.3506398

Author Information

Name Institution
Tae-Kwang EomYeungnam University
Soo-Hyun KimYeungnam University
Kye-Sun ParkUniversity of Ulsan
Sunjung KimUniversity of Ulsan
Hoon KimApplied Materials

Films

Plasma RuSiN

Hardware used: NCD Technology Lucida MP-100
Isopropylmethylbenzene Cyclohexadiene Ruthenium, IMBCHRu
CAS#: 0-0-0
TIPAS, 3IPAS, ((CH3)2CHN)3SiH, Tris(IsoPropyl)AminoSilane
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 250

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Substrates

TiN

Notes

1364