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An economical, compact inductively coupled plasma source.

Ideal for:

  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Isopropylmethylbenzene Cyclohexadiene Ruthenium, IMBCHRu, CAS# 0-0-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 6 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
2Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
3Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
4Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
5Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
6Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu