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Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects

Type:
Journal
Info:
Journal of Alloys and Compounds, Volume 686, 2016, Pages 1025 - 1031
Date:
2016-06-27
DOI:
http://dx.doi.org/10.1016/j.jallcom.2016.06.270

Author Information

Name Institution
Hyun-Jung LeeYeungnam University
Tae Eun HongKorean Basic Science Institute
Soo-Hyun KimYeungnam University

Films

Plasma Ru

Hardware used: Unknown
Isopropylmethylbenzene Cyclohexadiene Ruthenium, IMBCHRu
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
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Deposition Temperature = 225C

Plasma Mn

Hardware used: Unknown
[bis(1,4-di-isopropyl-1,3-diazabutadienyl)Mn(II)]
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 225C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

SiO2

Notes

919