Publication Information

Title: Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects

Type: Journal

Info: Journal of Alloys and Compounds, Volume 686, 2016, Pages 1025 - 1031

Date: 2016-06-27

DOI: http://dx.doi.org/10.1016/j.jallcom.2016.06.270

Author Information

Name

Institution

Yeungnam University

Korean Basic Science Institute

Yeungnam University

Films

Plasma Ru using Unknown

Deposition Temperature = 225C

0-0-0

7664-41-7

Plasma Mn using Unknown

Deposition Temperature = 225C

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Conformality, Step Coverage

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Substrates

SiO2

Keywords

Interconnect

Diffusion Barrier

Seed Layer

Notes

919



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