
Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
Type:
Poster
Info:
ALD 2009
Date:
2009-07-16
DOI:
No DOI
Author Information
Name | Institution |
---|---|
Tae-Kwang Eom | Yeungnam University |
Windu Sari | Yeungnam University |
Soo-Hyun Kim | Yeungnam University |
Films
Plasma RuSiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Diffusion Barrier Properties
Analysis: Anneal
Characteristic: Thermal Stability
Analysis: Anneal
Substrates
Unknown |
Notes
70 |