Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu

Type:
Poster
Info:
ALD 2009
Date:
2009-07-16
DOI:
No DOI

Author Information

Name Institution
Tae-Kwang EomYeungnam University
Windu SariYeungnam University
Soo-Hyun KimYeungnam University

Films

Plasma RuSiN

Hardware used: NCD Technology Lucida MP-100
Isopropylmethylbenzene Cyclohexadiene Ruthenium, IMBCHRu
CAS#: 0-0-0
TIPAS, 3IPAS, ((CH3)2CHN)3SiH, Tris(IsoPropyl)AminoSilane
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Anneal
Diagnostic: -

Characteristic: Thermal Stability
Analysis: Anneal
Diagnostic: -

Substrates

Unknown

Notes

70