Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu

Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (11) D657-D663 (2011)
Date:
2011-08-11
DOI:
http://dx.doi.org/10.1149/2.054111jes

Author Information

Name Institution
Tae-Kwang EomYeungnam University
Soo-Hyun KimYeungnam University
Dae-Hwan KangSamsung Electronics Co.
Hoon KimApplied Materials

Films

Plasma Ru

Hardware used: NCD Technology Lucida MP-100
Isopropylmethylbenzene Cyclohexadiene Ruthenium, IMBCHRu
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 270C

Plasma SiNx

Hardware used: NCD Technology Lucida MP-100
TIPAS, 3IPAS, ((CH3)2CHN)3SiH, Tris(IsoPropyl)AminoSilane
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 270C

Plasma RuSiN

Hardware used: NCD Technology Lucida MP-100
Isopropylmethylbenzene Cyclohexadiene Ruthenium, IMBCHRu
CAS#: 0-0-0
TIPAS, 3IPAS, ((CH3)2CHN)3SiH, Tris(IsoPropyl)AminoSilane
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: CAMECA IMS 6F

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

TiN

Notes

1363