Publication Information

Title:
Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (11) D657-D663 (2011)
Date:
2011-08-11

Author Information

Name Institution
Tae-Kwang EomYeungnam University
Soo-Hyun KimYeungnam University
Dae-Hwan KangSamsung Electronics Co.
Hoon KimApplied Materials

Films

Plasma Ru


Plasma SiNx



Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Substrates

TiN

Keywords

Diffusion Barrier

Notes

1363