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Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
Type:
Journal
Info:
AIP ADVANCES 10, 015239 (2020)
Date:
2020-01-03
Author Information
| Name | Institution |
|---|---|
| Wan-Ho Choi | Hanyang University |
| Min Jung Kim | Hanyang University |
| Woojin Jeon | Kyung Hee University |
| Jin-Seong Park | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Threshold Voltage
Analysis: Transistor Characterization
Characteristic: Mobility
Analysis: Transistor Characterization
Characteristic: Subthreshold Swing
Analysis: Transistor Characterization
Characteristic: Hysteresis
Analysis: Transistor Characterization
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
| SiO2 |
| ZrO2 |
Notes
| 1435 |