Publication Information

Title:
Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
Type:
Journal
Info:
AIP ADVANCES 10, 015239 (2020)
Date:
2020-01-03

Author Information

Name Institution
Wan-Ho ChoiHanyang University
Min Jung KimHanyang University
Woojin JeonKyung Hee University
Jin-Seong ParkHanyang University

Films


Plasma SiO2

Hardware used: Unknown


CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Threshold Voltage
Analysis: Transistor Characterization

Characteristic: Mobility
Analysis: Transistor Characterization

Characteristic: Subthreshold Swing
Analysis: Transistor Characterization

Characteristic: Hysteresis
Analysis: Transistor Characterization

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon
SiO2
ZrO2

Keywords

Notes

1435