Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices

Type:
Journal
Info:
J. Korean Inst. Surf. Eng. Vol.53, No.3, 2020.
Date:
2020-06-29
DOI:
https://doi.org/10.5695/JKISE.2020.53.3.124

Author Information

Name Institution
Baek-Ju LeeHanwha Corporation
Jae-Soon HwangHanwha Corporation
Dong-Won SeoHanwha Corporation
Jae-Wook ChoiHanwha Corporation

Films

Plasma SiO2

Hardware used: Custom Spatial
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
He, Helium
CAS#: 7440-59-7
Deposition Temperature = 500C

Plasma SiO2

Hardware used: Custom Spatial
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
He, Helium
CAS#: 7440-59-7
Deposition Temperature = 500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Characteristic: Stress
Analysis: -
Diagnostic: -

Substrates

Si(100)

Notes

1514