Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process

Type:
Journal
Info:
Scientific Reports 12, Article number: 15756 (2022)
Date:
2022-09-09
DOI:
http://dx.doi.org/10.1038/s41598-022-20201-y

Author Information

Name Institution
Yoenju ChoiKyung Hee University
Taehoon KimWonik IPS Ltd.
Hangyul LeeWonik IPS Ltd.
Jusung ParkWonik IPS Ltd.
Juhwan ParkWonik IPS Ltd.
Dongho RyuWonik IPS Ltd.
Woojin JeonKyung Hee University

Films

Plasma SiO2

Hardware used: Wonik IPS MAHA_AL
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 50C

Plasma SiO2

Hardware used: Wonik IPS MAHA_AL
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 50C

Plasma SiO2

Hardware used: Wonik IPS MAHA_AL
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 50C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: KLA-Tencor Aleris

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Fisher Scientific Nexsa

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Fisher Scientific Nexsa

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Fisher Scientific Nexsa

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7600F

Substrates

Silicon

Notes

1696