Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 11 (9) K89-K92 (2008)
Date:
2008-05-12
DOI:
http://dx.doi.org/10.1149/1.2952432

Author Information

Name Institution
Sung-Soo YimSeoul National University
Do-Joong LeeSeoul National University
Ki-Su KimSeoul National University
Moon-Sang LeeSeoul National University
Soo-Hyun KimYeungnam University
Ki-Bum KimSeoul National University

Films

Plasma Ru

Hardware used: ASM Genitech PEALD
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Thermal Ru

Hardware used: ASM Genitech PEALD
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Nucleation
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM-3000F

Substrates

SiO2

Keywords

Nucleation

Notes

1191