Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application

Publication Information

Title: Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application

Type: Journal

Info: Electrochemical and Solid-State Letters, 11 (9) K89-K92 (2008)

Date: 2008-05-12

DOI: http://dx.doi.org/10.1149/1.2952432

Author Information

Name

Institution

Sung-Soo Yim

Seoul National University

Do-Joong Lee

Seoul National University

Ki-Su Kim

Seoul National University

Moon-Sang Lee

Seoul National University

Soo-Hyun Kim

Yeungnam University

Ki-Bum Kim

Seoul National University

Films

Plasma Ru using ASM Genitech PEALD

Deposition Temperature = 300C

Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)₂

32992-96-4

Where to buy precursor

NH₃, Ammonia

7664-41-7

Thermal Ru using ASM Genitech PEALD

Deposition Temperature = 300C

Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)₂

32992-96-4

Where to buy precursor

O₂, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Nucleation

TEM, Transmission Electron Microscope

JEOL JEM-3000F

Substrates

SiO₂

Keywords

Nucleation

Notes

1191

Mark Sowa

Shortcuts

Films

Precursors

Deposition Hardware

Film and Plasma Characteristics

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