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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 11 (9) K89-K92 (2008)
Date:
2008-05-12
Author Information
| Name | Institution |
|---|---|
| Sung-Soo Yim | Seoul National University |
| Do-Joong Lee | Seoul National University |
| Ki-Su Kim | Seoul National University |
| Moon-Sang Lee | Seoul National University |
| Soo-Hyun Kim | Yeungnam University |
| Ki-Bum Kim | Seoul National University |
Films
Plasma Ru
Thermal Ru
Film/Plasma Properties
Characteristic: Nucleation
Analysis: TEM, Transmission Electron Microscope
Substrates
| SiO2 |
Keywords
| Nucleation |
Notes
| 1191 |