Publication Information

Title: Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition

Type: Journal

Info: Electrochemical and Solid-State Letters, 9 (10) G299-G301 (2006)

Date: 2006-06-01

DOI: http://dx.doi.org/10.1149/1.2221770

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Films

Plasma ZnO using ASM Genitech PEALD

Deposition Temperature Range = 75-150C

557-20-0

7782-44-7

Thermal ZnO using ASM Genitech PEALD

Deposition Temperature = 150C

557-20-0

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Chemical Composition, Impurities

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

-

Substrates

Si(100)

Keywords

Plasma vs Thermal Comparison

Notes

1171



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