Characteristics of TiO2 Films Prepared by ALD With and Without Plasma

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (11) F73-F76 (2004)
Date:
2004-04-22
DOI:
http://dx.doi.org/10.1149/1.1805502

Author Information

Name Institution
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Jin Ho LeeElectronics and Telecommunication Research Institute, (ETRI)

Films

Thermal TiO2

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Plasma TiO2

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma TiO2

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Uniformity
Analysis: -
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Keywords

Plasma vs Thermal Comparison

Notes

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