Publication Information

Title: Characteristics of TiO2 Films Prepared by ALD With and Without Plasma

Type: Journal

Info: Electrochemical and Solid-State Letters, 7 (11) F73-F76 (2004)

Date: 2004-04-22

DOI: http://dx.doi.org/10.1149/1.1805502

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Films

Thermal TiO2 using ASM Genitech PEALD

Deposition Temperature = 250C

546-68-9

7732-18-5

Deposition Temperature = 250C

546-68-9

7782-44-7

Deposition Temperature = 250C

546-68-9

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

Unknown

Uniformity

Unknown

Unknown

Microstructure

TEM, Transmission Electron Microscope

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Substrates

Silicon

Keywords

Plasma vs Thermal Comparison

Notes

1234



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