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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (11) F73-F76 (2004)
Date:
2004-04-22
Author Information
| Name | Institution |
|---|---|
| Jung Wook Lim | Electronics and Telecommunication Research Institute, (ETRI) |
| Sun Jin Yun | Electronics and Telecommunication Research Institute, (ETRI) |
| Jin Ho Lee | Electronics and Telecommunication Research Institute, (ETRI) |
Films
Thermal TiO2
Plasma TiO2
Plasma TiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Characteristic: Uniformity
Analysis: -
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
Keywords
| Plasma vs Thermal Comparison |
Notes
| 1234 |