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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

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Sun Jin Yun Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Sun Jin Yun returned 15 record(s).

NumberTitle
1Optical and Electrical Properties of TixSi1-xOy Films
2Optical and Electrical Properties of AlxTi1-xO Films
3Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
4Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
5Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
6Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
7PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
8Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
9Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
10Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
11Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
12Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
13Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
14Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
15Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition