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Optical and Electrical Properties of TixSi1-xOy Films

Type:
Journal
Info:
ETRI Journal, Volume 31, Number 6, December 2009
Date:
2009-10-09
DOI:
http://dx.doi.org/10.4218/etrij.09.1209.0033

Author Information

Name Institution
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Je Ha KimElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma TiSiO

Hardware used: Custom
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
TEOS, Si(OC2H5)4, TetraEthyl OrthoSilicate
CAS#: 78-10-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Reflectivity
Analysis: Reflectometry
Diagnostic: -

Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4156B Semiconductor Parameter Analyzer

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

Si(100)
ITO

Notes

47