Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


TEOS, Si(OC2H5)4, TetraEthyl OrthoSilicate, CAS# 78-10-4

Where to buy

NumberVendorRegionLink
1Ereztech🇺🇸TetraEthyl OrthoSilicate, Si(OC2H5)4, TEOS
2DOCK/CHEMICALS🇩🇪Tetraethylorthosilicate
3Strem Chemicals, Inc.🇺🇸Tetraethoxysilane, min. 98% TEOS
4Pegasus Chemicals🇬🇧tetraethyl orthosilicate
5Entegris🇺🇸TEOS

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 7 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
2Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
3Radical Enhanced Atomic Layer Deposition of Metals and Oxides
4Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition
5Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
6Optical and Electrical Properties of TixSi1-xOy Films
7Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition