Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


TEOS, Si(OC2H5)4, TetraEthyl OrthoSilicate, CAS# 78-10-4

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALS🇩🇪Tetraethylorthosilicate
2Pegasus Chemicals🇬🇧tetraethyl orthosilicate
3Ereztech🇺🇸TetraEthyl OrthoSilicate, Si(OC2H5)4, TEOS
4Entegris🇺🇸TEOS
5Strem Chemicals, Inc.🇺🇸Tetraethoxysilane, min. 98% TEOS

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 7 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
2Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition
3Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
4Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
5Radical Enhanced Atomic Layer Deposition of Metals and Oxides
6Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
7Optical and Electrical Properties of TixSi1-xOy Films