Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9(1) F8-F11 (2006)
Date:
2005-09-14
DOI:
http://dx.doi.org/10.1149/1.2136249

Author Information

Name Institution
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Jin Ho LeeElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 120-150C

Plasma AlSixOy

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
TEOS, Si(OC2H5)4, TetraEthyl OrthoSilicate
CAS#: 78-10-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 120-150C

Film/Plasma Properties

Substrates

Notes

194