Publication Information

Title: Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition

Type: Journal

Info: Electrochemical and Solid-State Letters, 9(1) F8-F11 (2006)

Date: 2005-09-14

DOI: http://dx.doi.org/10.1149/1.2136249

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3 using Custom

Deposition Temperature Range = 120-150C

75-24-1

7782-44-7

Plasma AlSixOy using Custom

Deposition Temperature Range = 120-150C

75-24-1

78-10-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

194



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