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Publication Information

Title: Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition

Type: Journal

Info: Electrochemical and Solid-State Letters, 9(1) F8-F11 (2006)

Date: 2005-09-14

DOI: http://dx.doi.org/10.1149/1.2136249

Author Information

Name

Institution

Jung Wook Lim

Electronics and Telecommunication Research Institute, (ETRI)

Sun Jin Yun

Electronics and Telecommunication Research Institute, (ETRI)

Jin Ho Lee

Electronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3 using Custom

Deposition Temperature Range = 120-150C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Oxygen, O2

7782-44-7

Plasma AlSixOy using Custom

Deposition Temperature Range = 120-150C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

TetraEthyl OrthoSilicate, Si(OC2H5)4, TEOS

78-10-4

Where to buy precursor

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

194


Mark Sowa

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