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Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 26(5) 1251 Sep/Oct 2008
Date:
2008-07-09
DOI:
http://dx.doi.org/10.1116/1.2966430

Author Information

Name Institution
Jiurong LiuUniversity of California - Los Angeles (UCLA)
Ryan M. MartinUniversity of California - Los Angeles (UCLA)
Jane P. ChangUniversity of California - Los Angeles (UCLA)

Films

Plasma SiO2

Hardware used: Custom Microwave Plasma
TEOS, Si(OC2H5)4, TetraEthyl OrthoSilicate
CAS#: 78-10-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 60C

Plasma HfO2

Hardware used: Custom Microwave Plasma
HfTB, Hf[OC(Me)3]4, Hf[OC(CH3)3]4, Hafnium tetra-tert-butoxide
CAS#: 2172-02-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 60C

Plasma HfSiOx

Hardware used: Custom Microwave Plasma
TEOS, Si(OC2H5)4, TetraEthyl OrthoSilicate
CAS#: 78-10-4
Where to buy precursor
HfTB, Hf[OC(Me)3]4, Hf[OC(CH3)3]4, Hafnium tetra-tert-butoxide
CAS#: 2172-02-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 60C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-88

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics MC2000

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Surface Reactions
Analysis: ATR-FTIR
Diagnostic: -

Characteristic: Bonding States
Analysis: ATR-FTIR
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Substrates

Si(100)

Notes

1209