Publication Information

Title: Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition

Type: Journal

Info: J. Vac. Sci. Technol. A 26(5) 1251 Sep/Oct 2008

Date: 2008-07-09

DOI: http://dx.doi.org/10.1116/1.2966430

Author Information

Name

Institution

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

Films

Deposition Temperature = 60C

78-10-4

7782-44-7

Deposition Temperature = 60C

2172-02-3

7782-44-7

Deposition Temperature = 60C

78-10-4

2172-02-3

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-88

Thickness

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

-

Band Gap

XPS, X-ray Photoelectron Spectroscopy

-

Plasma Species

OES, Optical Emission Spectroscopy

Ocean Optics MC2000

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

-

Compositional Depth Profiling

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

-

Surface Reactions

ATR-FTIR

-

Bonding States

ATR-FTIR

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Leakage Current

I-V, Current-Voltage Measurements

HP 4145B Semiconductor Parameter Analyzer

Substrates

Si(100)

Keywords

Notes

1209



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