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Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 26(5) 1251 Sep/Oct 2008
Date:
2008-07-09
Author Information
| Name | Institution |
|---|---|
| Jiurong Liu | University of California - Los Angeles (UCLA) |
| Ryan M. Martin | University of California - Los Angeles (UCLA) |
| Jane P. Chang | University of California - Los Angeles (UCLA) |
Films
Plasma SiO2
Plasma HfO2
Plasma HfSiOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Surface Reactions
Analysis: ATR-FTIR
Characteristic: Bonding States
Analysis: ATR-FTIR
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1209 |