Publication Information

Title:
Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
Type:
Journal
Info:
Materials Research Bulletin 83 (2016) 597-602
Date:
2016-07-10

Author Information

Name Institution
Da Jung LeeElectronics and Telecommunication Research Institute, (ETRI)
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Jae Kyoung MunElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3


Plasma AlON


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Si(100)

Keywords

Notes

Compares PEALD with RPALD. Does not explain difference or hardware used for RPALD.
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