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PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (12) F81-F84 (2004)
Date:
2004-06-25
Author Information
| Name | Institution |
|---|---|
| Sun Jin Yun | Electronics and Telecommunication Research Institute, (ETRI) |
| Jung Wook Lim | Electronics and Telecommunication Research Institute, (ETRI) |
| Jin Ho Lee | Electronics and Telecommunication Research Institute, (ETRI) |
Films
Plasma ZrO2
Plasma ZrO2
Hardware used: Custom Direct Capacitively Coupled Plasma
CAS#: 175923-04-3
CAS#: 7782-44-7
CAS#: 7727-37-9
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Etch Rate
Analysis: Custom
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Substrates
| Si(100) |
| ITO |
Notes
| 1237 |