Publication Information

Title: PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen

Type: Journal

Info: Electrochemical and Solid-State Letters, 7 (12) F81-F84 (2004)

Date: 2004-06-25

DOI: http://dx.doi.org/10.1149/1.1814591

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Films

Deposition Temperature Range = 110-250C

175923-04-3

7782-44-7

Deposition Temperature Range = 110-250C

175923-04-3

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Density

RBS, Rutherford Backscattering Spectrometry

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Etch Rate

Custom

Custom

Microstructure

TEM, Transmission Electron Microscope

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Substrates

Si(100)

ITO

Keywords

Notes

1237



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