Publication Information

Title: Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: Journal of The Electrochemical Society, 154(11) G239-G243(2007)

Date: 2007-07-05

DOI: http://dx.doi.org/10.1149/1.2776162

Author Information

Name

Institution

Jung Wook Lim

Electronics and Telecommunication Research Institute, (ETRI)

Sun Jin Yun

Electronics and Telecommunication Research Institute, (ETRI)

Hyun-Tak Kim

Electronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3 using Custom

Deposition Temperature Range = 150-250C

TMA, AlMe3, Trimethyl Aluminum

75-24-1

Where to buy precursor

O2, Oxygen

7782-44-7

Plasma AlTixOy using Custom

Deposition Temperature Range = 150-250C

TMA, AlMe3, Trimethyl Aluminum

75-24-1

Where to buy precursor

TTIP, Titanium(IV) i-propoxide

546-68-9

Where to buy precursor

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

193


Mark Sowa

Shortcuts

Films
Precursors
Deposition Hardware
Film and Plasma Characteristics
Multi-factor Search
ALD and PEALD Background
On-line PEALD Theses
About plasma-ald.com

Contact Us
ALD Links

© 2014-2019 plasma-ald.com