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Publication Information

Title: Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: Journal of The Electrochemical Society, 154(11) G239-G243(2007)

Date: 2007-07-05

DOI: http://dx.doi.org/10.1149/1.2776162

Author Information

Name

Institution

Jung Wook Lim

Electronics and Telecommunication Research Institute, (ETRI)

Sun Jin Yun

Electronics and Telecommunication Research Institute, (ETRI)

Hyun-Tak Kim

Electronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3 using Custom

Deposition Temperature Range = 150-250C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Oxygen, O2

7782-44-7

Plasma AlTixOy using Custom

Deposition Temperature Range = 150-250C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

TTIP, Titanium(IV) i-propoxide

546-68-9

Where to buy precursor

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

193


Mark Sowa

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