Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 154(11) G239-G243(2007)
Date:
2007-07-05
DOI:
http://dx.doi.org/10.1149/1.2776162

Author Information

Name Institution
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Hyun-Tak KimElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-250C

Plasma AlTixOy

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-250C

Film/Plasma Properties

Substrates

Keywords

Notes

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