Publication Information

Title:
Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (9) G185-G187 (2004)
Date:
2004-01-30

Author Information

Name Institution
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Yong-Hae KimElectronics and Telecommunication Research Institute, (ETRI)
Choong Yong SohnElectronics and Telecommunication Research Institute, (ETRI)
Jin Ho LeeElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon
SiO2

Keywords

Notes

1167