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Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (9) G185-G187 (2004)
Date:
2004-01-30
DOI:
http://dx.doi.org/10.1149/1.1777551

Author Information

Name Institution
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Yong-Hae KimElectronics and Telecommunication Research Institute, (ETRI)
Choong Yong SohnElectronics and Telecommunication Research Institute, (ETRI)
Jin Ho LeeElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon
SiO2

Notes

1167