Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 85, 4896-4898 (2004)
Date:
2004-10-07
DOI:
http://dx.doi.org/10.1063/1.1826238

Author Information

Name Institution
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Young-Wook KoElectronics and Telecommunication Research Institute, (ETRI)
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma AlON

Hardware used: ASM Genitech PEALD
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 40-150C

Film/Plasma Properties

Characteristic: Passivation
Analysis: Custom
Diagnostic: -

Characteristic: Etch Rate
Analysis: Wet Etch
Diagnostic: -

Substrates

OLED

Notes

1473