Publication Information

Title:
Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7(8) F45-F48(2004)
Date:
2003-12-02

Author Information

Name Institution
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3

Hardware used: Custom


CAS#: 7782-44-7

CAS#: 7727-37-9

Thermal Al2O3


Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Etch Rate
Analysis: Wet Etch

Substrates

Si(100)
ITO

Keywords

High-k Dielectric Thin Films

Notes

Custom CCP electrical properties comparison for PEALD and thermal ALD Al2O3.
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