Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 10 (3) H90-H93 (2007)
Date:
2006-10-24
DOI:
http://dx.doi.org/10.1149/1.2426408

Author Information

Name Institution
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Jae Bon KooElectronics and Telecommunication Research Institute, (ETRI)
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Seong Hyun KimElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma ZrO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: -
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Ti
SiO2

Notes

1329