Publication Information

Title:
Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 10 (3) H90-H93 (2007)
Date:
2006-10-24

Author Information

Name Institution
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Jae Bon KooElectronics and Telecommunication Research Institute, (ETRI)
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Seong Hyun KimElectronics and Telecommunication Research Institute, (ETRI)

Films


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: -

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Ti
SiO2

Keywords

Notes

1329