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Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 10 (3) H90-H93 (2007)
Date:
2006-10-24
Author Information
| Name | Institution |
|---|---|
| Sun Jin Yun | Electronics and Telecommunication Research Institute, (ETRI) |
| Jae Bon Koo | Electronics and Telecommunication Research Institute, (ETRI) |
| Jung Wook Lim | Electronics and Telecommunication Research Institute, (ETRI) |
| Seong Hyun Kim | Electronics and Telecommunication Research Institute, (ETRI) |
Films
Plasma ZrO2
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: -
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Ti |
| SiO2 |
Notes
| 1329 |