Publication Information

Title: Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: ETRI Journal, Volume 27, Number 1, February 2005

Date: 2005-02-01

DOI: http://dx.doi.org/10.4218/etrij.05.0204.0023

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Films

Plasma SiO2 using Custom

Deposition Temperature Range = 100-250C

1624-01-7

13307-05-6

7727-37-9

7782-44-7

Thermal SiO2 using Custom

Deposition Temperature Range = 100-250C

1624-01-7

13307-05-6

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

Unknown

Etch Rate

Wet Etch

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Interface State Density

C-V, Capacitance-Voltage Measurements

Unknown

Schottky Analysis

I-V, Current-Voltage Measurements

Unknown

Poole-Frenkel Analysis

I-V, Current-Voltage Measurements

Unknown

Substrates

Si(100)

ITO

Keywords

Notes

26



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