Publication Information

Title:
Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
ETRI Journal, Volume 27, Number 1, February 2005
Date:
2005-02-01

Author Information

Name Institution
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Jin Ho LeeElectronics and Telecommunication Research Institute, (ETRI)

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: -

Characteristic: Etch Rate
Analysis: Wet Etch

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Schottky Analysis
Analysis: I-V, Current-Voltage Measurements

Characteristic: Poole-Frenkel Analysis
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)
ITO

Keywords

Notes

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