Publication Information

Title: Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: ETRI Journal, Volume 27, Number 1, February 2005

Date: 2005-02-01

DOI: http://dx.doi.org/10.4218/etrij.05.0204.0023

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Films

Plasma SiO2 using Custom

Deposition Temperature Range = 100-250C

1624-01-7

13307-05-6

7727-37-9

7782-44-7

Thermal SiO2 using Custom

Deposition Temperature Range = 100-250C

1624-01-7

13307-05-6

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

-

Etch Rate

Wet Etch

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Leakage Current

I-V, Current-Voltage Measurements

-

Breakdown Voltage

I-V, Current-Voltage Measurements

-

Capacitance

C-V, Capacitance-Voltage Measurements

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

Interface State Density

C-V, Capacitance-Voltage Measurements

-

Schottky Analysis

I-V, Current-Voltage Measurements

-

Poole-Frenkel Analysis

I-V, Current-Voltage Measurements

-

Substrates

Si(100)

ITO

Keywords

Notes

26



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