Publication Information

Title:
Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
Type:
Journal
Info:
Journal of Electroceramics, v. 17, n. 2, p. 145--149 (2006)
Date:
2006-08-17

Author Information

Name Institution
G. X. LiuDong-Eui University
F. K. ShanDong-Eui University
J. J. ParkDong-Eui University
Won-Jae LeeDong-Eui University
G. H. LeeDong-Eui University
I. S. KimDong-Eui University
B. C. ShinDong-Eui University
Soon-Gil YoonChungnam National University

Films

Plasma Ga2O3

Hardware used: ASM Genitech PEALD

CAS#: 0-0-0

CAS#: 7782-44-7


Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

1305