Publication Information

Title: Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)

Type: Journal

Info: Journal of Electroceramics, v. 17, n. 2, p. 145--149 (2006)

Date: 2006-08-17

DOI: http://dx.doi.org/10.1007/s10832-006-0461-5

Author Information

Name

Institution

Dong-Eui University

Dong-Eui University

Dong-Eui University

Dong-Eui University

Dong-Eui University

Dong-Eui University

Dong-Eui University

Chungnam National University

Films

Deposition Temperature = 200C

0-0-0

7782-44-7

Deposition Temperature = 200C

0-0-0

3275-24-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Profilometry

-

Images

SEM, Scanning Electron Microscopy

Hitachi S-4200

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Hitachi S-4200

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

VG Scientific Microlab 350

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku D/Max-2100H

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4275A LCR

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4275A LCR

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4275A LCR

Leakage Current

I-V, Current-Voltage Measurements

HP 4145B Semiconductor Parameter Analyzer

Substrates

Si(100)

Keywords

Notes

1305



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