Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


[(CH3)2GaNH2]3, CAS# 0-0-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 4 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
2Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
3Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
4Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications