Publication Information

Title: Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

Type: Journal

Info: Journal of Applied Physics 98, 023504 (2005)

Date: 2005-05-27

DOI: http://dx.doi.org/10.1063/1.1980535

Author Information

Name

Institution

Dong-Eui University

Dong-Eui University

Dong-Eui University

Dong-Eui University

Dong-Eui University

Dong-Eui University

Films

Plasma Ga2O3 using Custom

Deposition Temperature = 200C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Hitachi S-4200

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

SPA 400

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Microlab 350

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku D/Max-2100H

Leakage Current

I-V, Current-Voltage Measurements

HP 4145B Semiconductor Parameter Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4275A LCR

Optical Properties

Optical Transmission

Varian-Cary 5 spectrophotometer

Thickness

Ellipsometry

Horiba Jobin Yvon UVISEL

Substrates

Si(100)

Sapphire

Keywords

Notes

1261



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