Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Applied Physics 98, 023504 (2005)
Date:
2005-05-27
DOI:
http://dx.doi.org/10.1063/1.1980535

Author Information

Name Institution
F. K. ShanDong-Eui University
G. X. LiuDong-Eui University
Won-Jae LeeDong-Eui University
G. H. LeeDong-Eui University
I. S. KimDong-Eui University
B. C. ShinDong-Eui University

Films

Plasma Ga2O3

Hardware used: Custom
[(CH3)2GaNH2]3
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4200

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: SPA 400

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: VG Scientific Microlab 350

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-2100H

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4275A LCR

Characteristic: Optical Properties
Analysis: Optical Transmission
Diagnostic: Varian-Cary 5 spectrophotometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Substrates

Si(100)
Sapphire

Notes

1261