Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications

Type:
Journal
Info:
Applied Physics Letters 87, 082909 (2005)
Date:
2005-07-21

Author Information

Name Institution
Nak-Jin SeongChungnam National University
Soon-Gil YoonChungnam National University
Won-Jae LeeDong-Eui University

Films

Plasma Ga2O3

Hardware used: Custom

CAS#: 0-0-0

CAS#: 7782-44-7


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

Si(001)

Keywords

Notes

1254