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Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications

Type:
Journal
Info:
Applied Physics Letters 87, 082909 (2005)
Date:
2005-07-21
DOI:
http://dx.doi.org/10.1063/1.2034100

Author Information

Name Institution
Nak-Jin SeongChungnam National University
Soon-Gil YoonChungnam National University
Won-Jae LeeDong-Eui University

Films

Plasma Ga2O3

Hardware used: Custom
[(CH3)2GaNH2]3
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma TiO2

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 617B electrometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

Si(001)

Notes

1254