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Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
Type:
Journal
Info:
Applied Physics Letters 87, 082909 (2005)
Date:
2005-07-21
Author Information
| Name | Institution |
|---|---|
| Nak-Jin Seong | Chungnam National University |
| Soon-Gil Yoon | Chungnam National University |
| Won-Jae Lee | Dong-Eui University |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
| Si(001) |
Notes
| 1254 |