Publication Information

Title: Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications

Type: Journal

Info: Applied Physics Letters 87, 082909 (2005)

Date: 2005-07-21

DOI: http://dx.doi.org/10.1063/1.2034100

Author Information

Name

Institution

Chungnam National University

Chungnam National University

Dong-Eui University

Films

Plasma Ga2O3 using Custom

Deposition Temperature = 200C

0-0-0

7782-44-7

Plasma TiO2 using Custom

Deposition Temperature = 200C

3275-24-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

Unknown

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

HP 4194A

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4194A

Leakage Current

I-V, Current-Voltage Measurements

Keithley 617B electrometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Substrates

Si(001)

Keywords

Notes

1254



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