Publication Information

Title: Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 50, No. 6, pp. 1827-1832

Date: 2006-09-12

DOI: http://www.jkps.or.kr/journal/download_pdf.php?spage

Author Information

Name

Institution

Dong-Eui University

Dong-Eui University

Dong-Eui University

Dong-Eui University

Films

Deposition Temperature Range = 100-300C

3275-24-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Seiko SPA-400

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku D/Max-2100H

Transmittance

Spectrophotometry

-

Band Gap

Spectrophotometry

-

Substrates

Si(100)

Quartz

Keywords

Notes

1324



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