Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 50, No. 6, pp. 1827-1832
Date:
2006-09-12

Author Information

Name Institution
G. X. LiuDong-Eui University
F. K. ShanDong-Eui University
Won-Jae LeeDong-Eui University
B. C. ShinDong-Eui University

Films

Plasma TiO2


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Transmittance
Analysis: Spectrophotometry

Characteristic: Band Gap
Analysis: Spectrophotometry

Substrates

Si(100)
Quartz

Notes

1324