Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 50, No. 6, pp. 1827-1832
Date:
2006-09-12
DOI:
http://www.jkps.or.kr/journal/download_pdf.php?spage

Author Information

Name Institution
G. X. LiuDong-Eui University
F. K. ShanDong-Eui University
Won-Jae LeeDong-Eui University
B. C. ShinDong-Eui University

Films

Plasma TiO2

Hardware used: ASM Genitech PEALD
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Seiko SPA-400

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-2100H

Characteristic: Transmittance
Analysis: Spectrophotometry
Diagnostic: -

Characteristic: Band Gap
Analysis: Spectrophotometry
Diagnostic: -

Substrates

Si(100)
Quartz

Notes

1324