Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

Type:
Journal
Info:
AIP ADVANCES 9, 035333 (2019)
Date:
2019-03-09
DOI:
http://dx.doi.org/10.1063/1.5085801

Author Information

Name Institution
Heungseop SongYonsei University
Donghyuk ShinYonsei University
Ji-eun JeongYonsei University
Heungsoo ParkYonsei University
Dae-Hong KoYonsei University

Films

Plasma TiO2

Hardware used: ASM Genitech PEALD
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Notes

1284