Publication Information

Title: Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

Type: Journal

Info: AIP ADVANCES 9, 035333 (2019)

Date: 2019-03-09

DOI: http://dx.doi.org/10.1063/1.5085801

Author Information

Name

Institution

Yonsei University

Yonsei University

Yonsei University

Yonsei University

Yonsei University

Films

Deposition Temperature = 250C

3275-24-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam alpha-SE

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Wet Etch Resistance

Custom

Custom

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Keywords

Notes

1284



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