A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application

Type:
Journal
Info:
Nanotechnology 21 (2010) 115203
Date:
2010-01-27
DOI:
http://dx.doi.org/10.1088/0957-4484/21/11/115203

Author Information

Name Institution
Hu Young JeongKorea Advanced Institute of Science and Technology
Yong In KimKorea Advanced Institute of Science and Technology
Jeong Yong LeeKorea Advanced Institute of Science and Technology
Sung-Yool ChoiElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma TiO2

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 80C

Film/Plasma Properties

Characteristic: Threshold Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Seiko SPA-400

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Substrates

Al
PES, Poly(Ether Sulfone)
SiO2

Keywords

Resistance RAM

Notes

720