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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
Type:
Journal
Info:
Nanotechnology 21 (2010) 115203
Date:
2010-01-27
Author Information
| Name | Institution |
|---|---|
| Hu Young Jeong | Korea Advanced Institute of Science and Technology |
| Yong In Kim | Korea Advanced Institute of Science and Technology |
| Jeong Yong Lee | Korea Advanced Institute of Science and Technology |
| Sung-Yool Choi | Electronics and Telecommunication Research Institute, (ETRI) |
Films
Plasma TiO2
Film/Plasma Properties
Characteristic: Threshold Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Substrates
| Al |
| PES, Poly(Ether Sulfone) |
| SiO2 |
Keywords
| Resistance RAM |
Notes
| 720 |