Publication Information

Title: A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application

Type: Journal

Info: Nanotechnology 21 (2010) 115203

Date: 2010-01-27

DOI: http://dx.doi.org/10.1088/0957-4484/21/11/115203

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Electronics and Telecommunication Research Institute, (ETRI)

Films

Deposition Temperature = 80C

546-68-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Threshold Voltage

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Resistive Switching

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Breakdown Voltage

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Seiko SPA-400

Interfacial Layer

TEM, Transmission Electron Microscope

JEOL 3010

Images

TEM, Transmission Electron Microscope

JEOL 3010

Thickness

TEM, Transmission Electron Microscope

JEOL 3010

Substrates

Al

PES, Poly(Ether Sulfone)

SiO2

Keywords

Resistance RAM

Notes

720



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