Publication Information

Title:
A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
Type:
Journal
Info:
Nanotechnology 21 (2010) 115203
Date:
2010-01-27

Author Information

Name Institution
Hu Young JeongKorea Advanced Institute of Science and Technology
Yong In KimKorea Advanced Institute of Science and Technology
Jeong Yong LeeKorea Advanced Institute of Science and Technology
Sung-Yool ChoiElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma TiO2


Film/Plasma Properties

Characteristic: Threshold Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Substrates

Al
PES, Poly(Ether Sulfone)
SiO2

Keywords

Resistance RAM

Notes

720