Title: A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
Type: Journal
Info: Nanotechnology 21 (2010) 115203
Date: 2010-01-27
DOI: http://dx.doi.org/10.1088/0957-4484/21/11/115203
Name
Institution
Korea Advanced Institute of Science and Technology
Korea Advanced Institute of Science and Technology
Korea Advanced Institute of Science and Technology
Electronics and Telecommunication Research Institute, (ETRI)
Characteristic
Analysis
Diagnostic
Threshold Voltage
I-V, Current-Voltage Measurements
Keithley 4200-SCS
Resistive Switching
I-V, Current-Voltage Measurements
Keithley 4200-SCS
Breakdown Voltage
I-V, Current-Voltage Measurements
Keithley 4200-SCS
Morphology, Roughness, Topography
AFM, Atomic Force Microscopy
Seiko SPA-400
Interfacial Layer
TEM, Transmission Electron Microscope
JEOL 3010
Images
TEM, Transmission Electron Microscope
JEOL 3010
Thickness
TEM, Transmission Electron Microscope
JEOL 3010
Al
PES, Poly(Ether Sulfone)
SiO2
Resistance RAM
720
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