
Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 13 2 G13-G16 2010
Date:
2009-12-09
Author Information
Name | Institution |
---|---|
Seok-Jun Won | Seoul National University |
Sungin Suh | Seoul National University |
Sang Woon Lee | Seoul National University |
Gyu-Jin Choi | Seoul National University |
Cheol Seong Hwang | Seoul National University |
Hyeong Joon Kim | Seoul National University |
Films
Plasma TiO2
Film/Plasma Properties
Characteristic: Areal Density
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Substrates
Ru |
Pt |
Al2O3 |
Silicon |
Keywords
Atomic Layer Deposition |
Atom-surface Impact |
Diffusion |
Insulating Thin Films |
Plasma Deposition |
Semiconductor Growth |
Semiconductor Materials |
Semiconductor Thin Films |
Titanium Compounds |
Notes
31 |