About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 13 2 G13-G16 2010
Date:
2009-12-09
DOI:
http://dx.doi.org/10.1149/1.3269901

Author Information

Name Institution
Seok-Jun WonSeoul National University
Sungin SuhSeoul National University
Sang Woon LeeSeoul National University
Gyu-Jin ChoiSeoul National University
Cheol Seong HwangSeoul National University
Hyeong Joon KimSeoul National University

Films

Plasma TiO2

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature = 280C

Film/Plasma Properties

Characteristic: Areal Density
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Substrates

Ru
Pt
Al2O3
Silicon

Notes

31