Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 13 2 G13-G16 2010
Date:
2009-12-09
DOI:
http://dx.doi.org/10.1149/1.3269901

Author Information

Name Institution
Seok-Jun WonSeoul National University
Sungin SuhSeoul National University
Sang Woon LeeSeoul National University
Gyu-Jin ChoiSeoul National University
Cheol Seong HwangSeoul National University
Hyeong Joon KimSeoul National University

Films

Plasma TiO2

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
N2O, Nitrous Oxide
CAS#: 10024-97-2
Where to buy precursor
Deposition Temperature = 280C

Film/Plasma Properties

Characteristic: Areal Density
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Substrates

Ru
Pt
Al2O3
Silicon

Notes

31