Publication Information

Title:
Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
Type:
Journal
Info:
Thin Solid Films 476 (2005) 252-257
Date:
2004-09-16

Author Information

Name Institution
Seung-Chul HaHynix Semiconductor
Eunsuk ChoiHynix Semiconductor
Soo-Hyun KimHynix Semiconductor
Jae-Sung RohHynix Semiconductor

Films

Thermal Al2O3


Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Silicon

Keywords

Notes

186