Publication Information

Title: Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate

Type: Journal

Info: Thin Solid Films 476 (2005) 252-257

Date: 2004-09-16

DOI: http://dx.doi.org/10.1016/j.tsf.2004.09.035

Author Information

Name

Institution

Hynix Semiconductor

Hynix Semiconductor

Hynix Semiconductor

Hynix Semiconductor

Films

Deposition Temperature = 350C

75-24-1

7732-18-5

Deposition Temperature = 350C

75-24-1

10028-15-6

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Rudolf AutoEL II

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Interfacial Layer

TEM, Transmission Electron Microscope

JEOL 2010F

Interfacial Layer

XPS, X-ray Photoelectron Spectroscopy

Surface Science Instruments

Substrates

Silicon

Keywords

Notes

186



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