Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma

Type:
Journal
Info:
ECS Solid State Letters, 2 (12) P114-P116 (2013)
Date:
2013-09-24

Author Information

Name Institution
Jong-Sik ChoiSeoul National University
Bong Seob YangSeoul National University
Seok-Jun WonSamsung Electronics Co.
Jun-Rae KimSeoul National University
Sungin SuhSeoul National University
Hui Kyung ParkChonnam National University
Jaeyeong HeoChonnam National University
Hyeong Joon KimSeoul National University

Films

Plasma SiO2


Plasma SiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Wet Etch Resistance
Analysis: Wet Etch

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

Notes

598