Publication Information

Title: Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma

Type: Journal

Info: ECS Solid State Letters, 2 (12) P114-P116 (2013)

Date: 2013-09-24

DOI: http://dx.doi.org/10.1149/2.007312ssl

Author Information

Name

Institution

Seoul National University

Seoul National University

Samsung Electronics Co.

Seoul National University

Seoul National University

Chonnam National University

Chonnam National University

Seoul National University

Films

Deposition Temperature = 150C

27804-64-4

7664-41-7

7782-44-7

Deposition Temperature Range = 150-350C

27804-64-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Gaertner L116D

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Unknown

Wet Etch Resistance

Wet Etch

Custom

Leakage Current

I-V, Current-Voltage Measurements

HP 4145A Semiconductor Parameter Analyzer

Breakdown Voltage

I-V, Current-Voltage Measurements

HP 4145A Semiconductor Parameter Analyzer

Substrates

Silicon

Keywords

Notes

598



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