Title: Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
Type: Journal
Info: Electronic Materials Letters. 2007;3(1): 17-21.
Date: 2007-01-01
DOI: http://eml.kim.or.kr/On_line/admin/files/17-21.pdf
Name
Institution
Hanyang University
Hanyang University
75-24-1
Characteristic
Analysis
Diagnostic
Thickness
TEM, Transmission Electron Microscope
Unknown
Thickness
Ellipsometry
Unknown
Chemical Composition, Impurities
AES, Auger Electron Spectroscopy
Unknown
Bonding States
XPS, X-ray Photoelectron Spectroscopy
Unknown
Interlayer
TEM, Transmission Electron Microscope
Unknown
Density
XRR, X-Ray Reflectivity
Unknown
Si(100)
PEALD Film Development
Substrates pirahna and HF cleaned
Rapid thermal anneal
3
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