The publication database currently has 1573 entries.
Search from:
196 Films Compositions
265 Precursors and Plasma Gases
76 Deposition Hardwares
242 Film and Plasma Characteristics
84 Theses
Use Multifactor Search for more complex searches and for searching by other criteria (author, affiliation, analysis, deposition temperature)
ALD Links
Contact Us
Advertising
Recent Database Additions
Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
Search 1573 plasma ALD publications by:
Search 1573 plasma ALD publications by:
Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
Type:
Journal
Info:
Electronic Materials Letters. 2007;3(1): 17-21.
Date:
2007-01-01
Author Information
| Name | Institution |
|---|---|
| Seungho Lee | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Substrates
| Si(100) |
Keywords
| PEALD Film Development |
Notes
| Substrates pirahna and HF cleaned |
| Rapid thermal anneal |
| 3 |