Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma

Publication Information

Title: Characteristics of an Al₂O₃ Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N₂O Plasma

Type: Journal

Info: Electronic Materials Letters. 2007;3(1): 17-21.

Date: 2007-01-01

DOI: http://eml.kim.or.kr/On_line/admin/files/17-21.pdf

Author Information

Name

Institution

Seungho Lee

Hanyang University

Hyeongtag Jeon

Hanyang University

Films

Plasma Al₂O₃ using Custom Direct Plasma

Deposition Temperature Range = 100-260C

TMA, AlMe₃, Trimethyl Aluminum

75-24-1

Where to buy precursor

N₂O, Nitrous Oxide

10024-97-2

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

Thickness

Ellipsometry

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Interlayer

TEM, Transmission Electron Microscope

Density

XRR, X-Ray Reflectivity

Substrates

Si(100)

Keywords

PEALD Film Development

Notes

Substrates pirahna and HF cleaned

Rapid thermal anneal

Mark Sowa

Shortcuts

Films

Precursors

Deposition Hardware

Film and Plasma Characteristics

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Publication Information

Author Information

Films

Plasma Al2O3 using Custom Direct Plasma

Deposition Temperature Range = 100-260C

Film/Plasma Properties

Substrates

Keywords

Notes

Shortcuts

Plasma Al₂O₃ using Custom Direct Plasma