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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
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Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
Type:
Journal
Info:
Electronic Materials Letters. 2007;3(1): 17-21.
Date:
2007-01-01
Author Information
| Name | Institution |
|---|---|
| Seungho Lee | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Substrates
| Si(100) |
Keywords
| PEALD Film Development |
Notes
| Substrates pirahna and HF cleaned |
| Rapid thermal anneal |
| 3 |