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Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
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Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma

Type:
Journal
Info:
Electronic Materials Letters. 2007;3(1): 17-21.
Date:
2007-01-01
DOI:
http://eml.kim.or.kr/On_line/admin/files/17-21.pdf

Author Information

Name Institution
Seungho LeeHanyang University
Hyeongtag JeonHanyang University

Films

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2O, Nitrous Oxide
CAS#: 10024-97-2
Where to buy precursor
Deposition Temperature Range = 100-260C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Substrates

Si(100)

Notes

Substrates pirahna and HF cleaned
Rapid thermal anneal
3