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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
Type:
Journal
Info:
Electronic Materials Letters. 2007;3(1): 17-21.
Date:
2007-01-01
Author Information
| Name | Institution |
|---|---|
| Seungho Lee | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Substrates
| Si(100) |
Keywords
| PEALD Film Development |
Notes
| Substrates pirahna and HF cleaned |
| Rapid thermal anneal |
| 3 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |