The publication database currently has 1658 entries.
Use Advanced Search for more complex searches
Recent Database Additions
Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
Type:
Journal
Info:
Electronic Materials Letters. 2007;3(1): 17-21.
Date:
2007-01-01
Author Information
| Name | Institution |
|---|---|
| Seungho Lee | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Substrates
| Si(100) |
Keywords
| PEALD Film Development |
Notes
| Substrates pirahna and HF cleaned |
| Rapid thermal anneal |
| 3 |