Publication Information

Title:
Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
Type:
Journal
Info:
Electronic Materials Letters. 2007;3(1): 17-21.
Date:
2007-01-01

Author Information

Name Institution
Seungho LeeHanyang University
Hyeongtag JeonHanyang University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Substrates

Si(100)

Keywords

PEALD Film Development

Notes

Substrates pirahna and HF cleaned
Rapid thermal anneal
3