Publication Information

Title:
Fast PEALD ZnO Thin-Film Transistor Circuits
Type:
Journal
Info:
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 2, FEBRUARY 2010
Date:
2009-12-15

Author Information

Name Institution
Devin A. MoureyThe Pennsylvania State University
Dalong ZhaoThe Pennsylvania State University
Jie SunThe Pennsylvania State University
Thomas N. JacksonThe Pennsylvania State University

Films

Plasma ZnO


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Mobile Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: Custom

Substrates

Cr
Al2O3

Keywords

TFT, Thin Film Transistor
TCO, Transparent Conducting Oxide
ZnO

Notes

Thermal Al2O3 films used for passivation.
Al2O3 patterned in 80C phosphoric acid.
ZnO patterned in dilute HCl.
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