Fast PEALD ZnO Thin-Film Transistor Circuits

Type:
Journal
Info:
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 2, FEBRUARY 2010
Date:
2009-12-15
DOI:
http://dx.doi.org/10.1109/TED.2009.2037178

Author Information

Name Institution
Devin A. MoureyThe Pennsylvania State University
Dalong ZhaoThe Pennsylvania State University
Jie SunThe Pennsylvania State University
Thomas N. JacksonThe Pennsylvania State University

Films

Plasma ZnO

Hardware used: Custom
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
CO2, Carbon Dioxide
CAS#: 124-38-9
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Mobile Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage Shift
Analysis: Custom
Diagnostic: -

Substrates

Cr
Al2O3

Notes

Thermal Al2O3 films used for passivation.
Al2O3 patterned in 80C phosphoric acid.
ZnO patterned in dilute HCl.
101