Publication Information

Title: Fast PEALD ZnO Thin-Film Transistor Circuits

Type: Journal

Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 2, FEBRUARY 2010

Date: 2009-12-15

DOI: http://dx.doi.org/10.1109/TED.2009.2037178

Author Information

Name

Institution

The Pennsylvania State University

The Pennsylvania State University

The Pennsylvania State University

The Pennsylvania State University

Films

Plasma ZnO using Custom

Deposition Temperature Range N/A

557-20-0

10024-97-2

Plasma Al2O3 using Custom

Deposition Temperature Range N/A

75-24-1

124-38-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Photoluminescence

PL, PhotoLuminescence

-

Leakage Current

I-V, Current-Voltage Measurements

-

Breakdown Voltage

I-V, Current-Voltage Measurements

-

Capacitance

C-V, Capacitance-Voltage Measurements

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

Mobile Charge Density

C-V, Capacitance-Voltage Measurements

-

Flat Band Voltage Shift

Custom

-

Substrates

Cr

Al2O3

Keywords

TFT, Thin Film Transistor

TCO, Transparent Conducting Oxide

ZnO

Notes

Thermal Al2O3 films used for passivation.

Al2O3 patterned in 80C phosphoric acid.

ZnO patterned in dilute HCl.

101



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