Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 153(4) G353-G357 (2006)
Date:
2005-12-21

Author Information

Name Institution
Yujin LeeHanyang University
Seokhoon KimHanyang University
Jaehyoung KooHanyang University
Inhoe KimHanyang University
Jihoon ChoiHanyang University
Hyeongtag JeonHanyang University
Youngdo WonHanyang University

Films

Thermal HfO2


Plasma HfO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

High-k Dielectric Thin Films
Doping
Plasma vs Thermal Comparison

Notes

Substrates pirahna cleaned + DI + HF + DI + N2.
Samples annealed at 600, 800, and 1000C for 1min in N2.
PEALD HfO2 with nitrogen incorporation by using N2O plasma for reduced silicon interfacial layer formation.
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