Title: Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Type: Journal
Info: Journal of The Electrochemical Society, 153(4) G353-G357 (2006)
Date: 2005-12-21
DOI: http://dx.doi.org/10.1149/1.2172556
Name
Institution
Hanyang University
Hanyang University
Hanyang University
Hanyang University
Hanyang University
Hanyang University
Hanyang University
352535-01-4
352535-01-4
Characteristic
Analysis
Diagnostic
Thickness
TEM, Transmission Electron Microscope
Unknown
Microstructure
TEM, Transmission Electron Microscope
Unknown
Bonding States
XPS, X-ray Photoelectron Spectroscopy
Unknown
Chemical Composition, Impurities
AES, Auger Electron Spectroscopy
Unknown
EOT, Equivalent Oxide Thickness
C-V, Capacitance-Voltage Measurements
Keithley 590 CV Analyzer
Hysteresis
C-V, Capacitance-Voltage Measurements
Keithley 590 CV Analyzer
Fixed Charge
C-V, Capacitance-Voltage Measurements
Keithley 590 CV Analyzer
Capacitance
C-V, Capacitance-Voltage Measurements
Keithley 590 CV Analyzer
Leakage Current
I-V, Current-Voltage Measurements
HP 4155A Semiconductor Parameter Analyzer
Silicon
High-k Dielectric Thin Films
Doping
Substrates pirahna cleaned + DI + HF + DI + N2.
Samples annealed at 600, 800, and 1000C for 1min in N2.
PEALD HfO2 with nitrogen incorporation by using N2O plasma for reduced silicon interfacial layer formation.
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