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Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 153(4) G353-G357 (2006)
Date:
2005-12-21
DOI:
http://dx.doi.org/10.1149/1.2172556

Author Information

Name Institution
Yujin LeeHanyang University
Seokhoon KimHanyang University
Jaehyoung KooHanyang University
Inhoe KimHanyang University
Jihoon ChoiHanyang University
Hyeongtag JeonHanyang University
Youngdo WonHanyang University

Films

Thermal HfO2

Hardware used: Custom
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature Range = 250-370C

Plasma HfO2

Hardware used: Custom
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature Range = 250-370C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

Silicon

Notes

Substrates pirahna cleaned + DI + HF + DI + N2.
Samples annealed at 600, 800, and 1000C for 1min in N2.
PEALD HfO2 with nitrogen incorporation by using N2O plasma for reduced silicon interfacial layer formation.
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