Name

Institution

Yujin Lee

Hanyang University

Seokhoon Kim

Hanyang University

Jaehyoung Koo

Hanyang University

Inhoe Kim

Hanyang University

Jihoon Choi

Hanyang University

Hyeongtag Jeon

Hanyang University

Youngdo Won

Hanyang University

Thermal HfO₂ using Custom

Deposition Temperature Range = 250-370C

TEMAHf, (EtMeN)₄Hf, [(C₂H₅)(CH₃)N]₄Hf, Tetrakis(EthylMethylAmido) Hafnium, Hafnium Ethylmethylamide

352535-01-4

Where to buy precursor

N₂O, Nitrous Oxide

10024-97-2

Plasma HfO₂ using Custom

Deposition Temperature Range = 250-370C

TEMAHf, (EtMeN)₄Hf, [(C₂H₅)(CH₃)N]₄Hf, Tetrakis(EthylMethylAmido) Hafnium, Hafnium Ethylmethylamide

352535-01-4

Where to buy precursor

N₂O, Nitrous Oxide

10024-97-2

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

-

Microstructure

TEM, Transmission Electron Microscope

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Fixed Charge

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Leakage Current

I-V, Current-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Silicon

High-k Dielectric Thin Films

Doping

Substrates pirahna cleaned + DI + HF + DI + N₂.

Samples annealed at 600, 800, and 1000C for 1min in N₂.

PEALD HfO₂ with nitrogen incorporation by using N₂O plasma for reduced silicon interfacial layer formation.

150