Publication Information

Title:
Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Journal of The Electrochemical Society, 153(4) G353-G357 (2006)
Date:
2005-12-21

Author Information

Name Institution
Yujin LeeHanyang University
Seokhoon KimHanyang University
Jaehyoung KooHanyang University
Inhoe KimHanyang University
Jihoon ChoiHanyang University
Hyeongtag JeonHanyang University
Youngdo WonHanyang University

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

High-k Dielectric Thin Films
Doping
Plasma vs Thermal Comparison

Notes

Substrates pirahna cleaned + DI + HF + DI + N2.
Samples annealed at 600, 800, and 1000C for 1min in N2.
PEALD HfO2 with nitrogen incorporation by using N2O plasma for reduced silicon interfacial layer formation.
150