Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Journal of The Electrochemical Society, 153(4) G353-G357 (2006)
Date:
2005-12-21
Author Information
| Name | Institution |
|---|---|
| Yujin Lee | Hanyang University |
| Seokhoon Kim | Hanyang University |
| Jaehyoung Koo | Hanyang University |
| Inhoe Kim | Hanyang University |
| Jihoon Choi | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Youngdo Won | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
Notes
| Substrates pirahna cleaned + DI + HF + DI + N2. |
| Samples annealed at 600, 800, and 1000C for 1min in N2. |
| PEALD HfO2 with nitrogen incorporation by using N2O plasma for reduced silicon interfacial layer formation. |
| 150 |