Publication Information

Title:
Fast Flexible Plastic Substrate ZnO Circuits
Type:
Journal
Info:
IEEE Electron Device Letters, Vol. 31, No. 4, April 2010
Date:
2010-03-04

Author Information

Name Institution
Dalong ZhaoThe Pennsylvania State University
Devin A. MoureyThe Pennsylvania State University
Thomas N. JacksonThe Pennsylvania State University

Films

Plasma ZnO


Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: Custom

Characteristic: Mobility
Analysis: I-V, Current-Voltage Measurements

Characteristic: Threshold Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Subthreshold Slope
Analysis: I-V, Current-Voltage Measurements

Characteristic: On/Off Current Ratio
Analysis: I-V, Current-Voltage Measurements

Characteristic: Threshold Voltage Shift
Analysis: Custom

Substrates

Polyimide

Keywords

Flexible Circuits
TFT, Thin Film Transistor

Notes

ZnO patterned in dilute HCl.
Al2O3 patterned in 80C phosphoric acid.
Polyimide substrate glass transition temperature ~354C.
Thermal Al2O3 films used for passivation.
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