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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 100, 071606 (2012)
Date:
2012-02-01
Author Information
| Name | Institution |
|---|---|
| H. Jussila | Aalto University |
| Päivi Mattila | Aalto University |
| J. Oksanen | Aalto University |
| Alexander Pyymaki Perros | Aalto University |
| J. Riikonen | Aalto University |
| Markus Bosund | Aalto University |
| A. Varpula | Aalto University |
| Teppo Huhtio | Aalto University |
| Harri Lipsanen | Aalto University |
| M. Sopanen | Aalto University |
Films
Plasma AlN
Thermal HfO2
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| GaAs |
| AlN |
Keywords
| High-k Dielectric Thin Films |
| Passivation |
| Gate Dielectric |
Notes
| Beneq TFS-500 plasma AlN and thermal HfO2 for GaAs passivation and MIS gate dielectric. |
| 175 |