Title: High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
Type: Journal
Info: APPLIED PHYSICS LETTERS 100, 071606 (2012)
Date: 2012-02-01
DOI: http://dx.doi.org/10.1063/1.3687199
Name
Institution
Aalto University
Aalto University
Aalto University
Aalto University
Aalto University
Aalto University
Aalto University
Aalto University
Aalto University
Aalto University
Characteristic
Analysis
Diagnostic
Capacitance
C-V, Capacitance-Voltage Measurements
Unknown
EOT, Equivalent Oxide Thickness
C-V, Capacitance-Voltage Measurements
Unknown
Interface Trap Density
C-V, Capacitance-Voltage Measurements
Unknown
Leakage Current
I-V, Current-Voltage Measurements
Unknown
GaAs
AlN
High-k Dielectric Thin Films
Passivation
Gate Dielectric
Beneq TFS-500 plasma AlN and thermal HfO2 for GaAs passivation and MIS gate dielectric.
175
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