Publication Information

Title:
High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 100, 071606 (2012)
Date:
2012-02-01

Author Information

Name Institution
H. JussilaAalto University
Päivi MattilaAalto University
J. OksanenAalto University
Alexander Pyymaki PerrosAalto University
J. RiikonenAalto University
Markus BosundAalto University
A. VarpulaAalto University
Teppo HuhtioAalto University
Harri LipsanenAalto University
M. SopanenAalto University

Films

Plasma AlN


Thermal HfO2


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

GaAs
AlN

Keywords

High-k Dielectric Thin Films
Passivation
Gate Dielectric

Notes

Beneq TFS-500 plasma AlN and thermal HfO2 for GaAs passivation and MIS gate dielectric.
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