Name

Institution

H. Jussila

Aalto University

Päivi Mattila

Aalto University

J. Oksanen

Aalto University

Alexander Pyymaki Perros

Aalto University

J. Riikonen

Aalto University

Markus Bosund

Aalto University

A. Varpula

Aalto University

Teppo Huhtio

Aalto University

Harri Lipsanen

Aalto University

M. Sopanen

Aalto University

Plasma AlN using Beneq TFS-500

Deposition Temperature Range N/A

TMA, AlMe₃, Trimethyl Aluminum

75-24-1

Where to buy precursor

NH₃, Ammonia

7664-41-7

Thermal HfO₂ using Beneq TFS-500

Deposition Temperature = 350C

Hafnium Tetrachloride, HfCl₄

13499-05-3

Where to buy precursor

H₂O, Water

7732-18-5

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

-

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

GaAs

AlN

High-k Dielectric Thin Films

Passivation

Gate Dielectric

Beneq TFS-500 plasma AlN and thermal HfO₂ for GaAs passivation and MIS gate dielectric.

175