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High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Type:
Journal
Info:
APPLIED PHYSICS LETTERS 100, 071606 (2012)
Date:
2012-02-01
DOI:
http://dx.doi.org/10.1063/1.3687199

Author Information

Name Institution
H. JussilaAalto University
Päivi MattilaAalto University
J. OksanenAalto University
Alexander Pyymaki PerrosAalto University
J. RiikonenAalto University
Markus BosundAalto University
A. VarpulaAalto University
Teppo HuhtioAalto University
Harri LipsanenAalto University
M. SopanenAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Thermal HfO2

Hardware used: Beneq TFS-500
Hafnium Tetrachloride, HfCl4
CAS#: 13499-05-3
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

GaAs
AlN

Notes

Beneq TFS-500 plasma AlN and thermal HfO2 for GaAs passivation and MIS gate dielectric.
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