Publication Information

Title: Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2

Type: Journal

Info: J. Phys. Chem. C, 2016, 120 (11), pp 5958-5967

Date: 2016-03-11

DOI: http://dx.doi.org/10.1021/acs.jpcc.5b05286

Author Information

Name

Institution

Yonsei University

Yonsei University

Yonsei University

Yonsei University

University of Ulsan

Air Liquide

Air Liquide

Yonsei University

Incheon National University

Films

Plasma HfO2 using Unknown

Deposition Temperature Range N/A

13499-05-3

7782-44-7

Plasma HfO2 using Unknown

Deposition Temperature Range N/A

78205-93-3

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

Unknown

-

Breakdown Voltage

I-V, Current-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Substrates

Keywords

Notes

808



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