Publication Information

Title:
Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B104 (2017)
Date:
2016-10-10

Author Information

Name Institution
Rémi VallatGrenoble Alps University (UGA)
Rémy GassilloudCEA - LETI MINATEC
Brice EychenneGrenoble Alps University (UGA)
Christophe ValléeGrenoble Alps University (UGA)

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon
Ta2O5

Keywords

Area Selective

Notes

Deposition hardware identified through reference 30.
Selectivity obtained by Ta2O5 etch back with NF3 plasma to nucleation delay prone substrate.
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